By Richard C. Alkire, Dieter M. Kolb, Heinz Gerischer, Charles W. Tobias
Like its predecessors, quantity 3 of this in the meantime well-established sequence covers chosen themes from electrochemical technological know-how and its purposes. The authors were conscientiously chosen one of the leaders within the respective fields. Their authoritative and accomplished contributions characterize the most recent cutting-edge. distinct awareness is paid to contemporary advancements, that are significantly and punctiliously mentioned. every one contribution of the current quantity keeps the excessive criteria of this sequence. This new sequence has been warmly welcomed through scientists world-wide, that's mirrored via the subsequent overview of the second one quantity: 'All the contributions during this quantity are good as much as the traditional of this wonderful sequence and should be of significant worth to electrochemists... The editors back need to be congratulated in this tremendous selection of reviews.' magazine of Electroanalytical Chemistry and Interfacial Chemistry
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Extra info for Advances in Electrochemical Science and Engineering Volume 3
Instead, in acidic solutions at sufficiently high anodic current densities, passivation of the GaP surface occurs (see Fig. 1 (n) (a), region I1 and Fig. 1 (p) (a), region 11). Etching in this region does not lead to homogeneously flat surfaces; scratches are observed on p-Gap, whereas large-sized etch pits as well as a few scratches form on n-Gap. , which are still unknown. Although there is no systematic comparative study of the kinetics of the anodic dissolution reaction and the morphology of the etched surface of GaAs and IrP, it seems that several of the conclusions drawn for GaP also hold for these materials.
Hence, the mechanism is an electrochemical one, in which the anodic oxidation of the semiconductor by holes is electrically compensated for by the cathodic reduction of a dissolved oxidizing agent over the valence band (i. , through injection of holes). Electroless etching mechanisms can easily be identified by combining investigations on the etching and electrochemical kinetics. Firstly, the ability of the oxidizing agent to inject holes into the valence band can be checked by measuring the dark cathodic current at a p-type electrode, as this current is markedly increased when holes are injected.
Similarly, this discussion mainly focuses on GaP single crystals, and the key role of (photo)anodic studies in elucidating open-circuit processes is demonstrated. 1 Electroless Etching As mentioned above, this discussion focuses on the semiconductor Gap. , the (111)- and the (iii)-face  (see also Sec. 2). Memming  showed that the Fe(CN)i- ion in alkaline solution is able to inject a hole into Gap, so that an electroless etching mechanism is expected. From etching experiments carried out at different electrode potentials, it was demonstrated that neither n- nor p-GaP crystals are etched by Fe(CN)i- ions when the electrode is polarized cathodically, so that any possible contribution of a chemical etching process can be excluded .
Advances in Electrochemical Science and Engineering Volume 3 by Richard C. Alkire, Dieter M. Kolb, Heinz Gerischer, Charles W. Tobias